Abstract
A transparent and flexible graphene charge-trap memory (GCTM) composed of a single-layer graphene channel and a 3-dimensional gate stack was fabricated on a polyethylene naphtalate substrate below eutectic temperatures (∼110 °C). The GCTM exhibits memory functionality of ∼8.6 V memory window and 30% data retention per 10 years, while maintaining ∼80% of transparency in the visible wavelength. Under both tensile and compressive stress, the GCTM shows minimal effect on the program/erase states and the on-state current. This can be utilized for transparent and flexible electronics that require integration of logic, memory, and display on a single substrate with high transparency and endurance under flex.
Original language | English |
---|---|
Pages (from-to) | 7879-7884 |
Number of pages | 6 |
Journal | ACS Nano |
Volume | 6 |
Issue number | 9 |
DOIs | |
State | Published - 25 Sep 2012 |
Keywords
- charge-trap memory
- flexible
- graphene
- nonvolatile memory
- transparent