Triisopropylsilyl pentacene organic thin-film transistors by ink-jet printing method

Young Hwan Park; Jungwon Kang; Yong Hoon Kim; Jeong In Han

Triisopropylsilyl pentacene organic thin-film transistors by ink-jet printing method

Young Hwan Park, Jungwon Kang, Yong Hoon Kim, Jeong In Han

Department of Chemical and Biochemical Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

By ink-jet printing method, organic thin-film transistors (OTFTs) having soluble 6,13-bis (triisopropylsilylethynyl) pentacene (TIPS pentacene) as an active material were fabricated. The TIPS pentacene solution was made with chlorobenzene and anisole. The solutions were printed on poly (4-vinylphenol) (PVP) dielectric layers and source/drain electrodes by piezo-type heads for bottom contact OTFTs. The dielectric layers had untreated or HMDS-treated conditions. The chlorobenzene device showed the highest field effect mobility of 0.016 cm²/Vs and the anisole HMDS-treated device shows the highest I_onI_off ratio of 10⁵.

Original language	English
Pages (from-to)	1135-1138
Number of pages	4
Journal	Proceedings of International Meeting on Information Display
Volume	2006
State	Published - 2006
Event	IMID/IDMC 2006: 6th Internaional Meeting on Information Display and the 5th International Display Manufacturing Conference - Daegu, Korea, Republic of Duration: 22 Aug 2006 → 25 Aug 2006

Cite this

@article{97f4746bd1214e22a88c18dd30571699,

title = "Triisopropylsilyl pentacene organic thin-film transistors by ink-jet printing method",

abstract = "By ink-jet printing method, organic thin-film transistors (OTFTs) having soluble 6,13-bis (triisopropylsilylethynyl) pentacene (TIPS pentacene) as an active material were fabricated. The TIPS pentacene solution was made with chlorobenzene and anisole. The solutions were printed on poly (4-vinylphenol) (PVP) dielectric layers and source/drain electrodes by piezo-type heads for bottom contact OTFTs. The dielectric layers had untreated or HMDS-treated conditions. The chlorobenzene device showed the highest field effect mobility of 0.016 cm2/Vs and the anisole HMDS-treated device shows the highest IonIoff ratio of 105.",

author = "Park, {Young Hwan} and Jungwon Kang and Kim, {Yong Hoon} and Han, {Jeong In}",

year = "2006",

language = "English",

volume = "2006",

pages = "1135--1138",

journal = "Proceedings of International Meeting on Information Display",

issn = "1738-7558",

note = "IMID/IDMC 2006: 6th Internaional Meeting on Information Display and the 5th International Display Manufacturing Conference ; Conference date: 22-08-2006 Through 25-08-2006",

}

TY - JOUR

T1 - Triisopropylsilyl pentacene organic thin-film transistors by ink-jet printing method

AU - Park, Young Hwan

AU - Kang, Jungwon

AU - Kim, Yong Hoon

AU - Han, Jeong In

PY - 2006

Y1 - 2006

N2 - By ink-jet printing method, organic thin-film transistors (OTFTs) having soluble 6,13-bis (triisopropylsilylethynyl) pentacene (TIPS pentacene) as an active material were fabricated. The TIPS pentacene solution was made with chlorobenzene and anisole. The solutions were printed on poly (4-vinylphenol) (PVP) dielectric layers and source/drain electrodes by piezo-type heads for bottom contact OTFTs. The dielectric layers had untreated or HMDS-treated conditions. The chlorobenzene device showed the highest field effect mobility of 0.016 cm2/Vs and the anisole HMDS-treated device shows the highest IonIoff ratio of 105.

AB - By ink-jet printing method, organic thin-film transistors (OTFTs) having soluble 6,13-bis (triisopropylsilylethynyl) pentacene (TIPS pentacene) as an active material were fabricated. The TIPS pentacene solution was made with chlorobenzene and anisole. The solutions were printed on poly (4-vinylphenol) (PVP) dielectric layers and source/drain electrodes by piezo-type heads for bottom contact OTFTs. The dielectric layers had untreated or HMDS-treated conditions. The chlorobenzene device showed the highest field effect mobility of 0.016 cm2/Vs and the anisole HMDS-treated device shows the highest IonIoff ratio of 105.

UR - http://www.scopus.com/inward/record.url?scp=33846170068&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:33846170068

SN - 1738-7558

VL - 2006

SP - 1135

EP - 1138

JO - Proceedings of International Meeting on Information Display

JF - Proceedings of International Meeting on Information Display

T2 - IMID/IDMC 2006: 6th Internaional Meeting on Information Display and the 5th International Display Manufacturing Conference

Y2 - 22 August 2006 through 25 August 2006

ER -

Triisopropylsilyl pentacene organic thin-film transistors by ink-jet printing method

Abstract

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