Tunable threshold voltage of an n-type Si nanowire ferroelectric-gate field effect transistor for high-performance nonvolatile memory applications

Ngoc Huynh Van; Jae Hyun Lee; Jung Inn Sohn; Seungnam Cha; Dongmok Whang; Jong Min Kim; Dae Joon Kang

doi:10.1088/0957-4484/25/20/205201

Tunable threshold voltage of an n-type Si nanowire ferroelectric-gate field effect transistor for high-performance nonvolatile memory applications

Ngoc Huynh Van, Jae Hyun Lee, Jung Inn Sohn, Seungnam Cha, Dongmok Whang, Jong Min Kim, Dae Joon Kang

Department of Physics

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

We successfully fabricated ferroelectric-gate field effect transistor (FEFET)-based nonvolatile memory devices using an n-type Si nanowire coated with omega-shaped-gate organic ferroelectric poly(vinylidene fluoride- trifluoroethylene) via a low-temperature fabrication process. Our FEFET memory devices with controllable threshold voltage via adjustment of the doping concentration exhibit excellent memory characteristics with ultra-low ON state power dissipation (≦3 nW), a large modulation in channel conductance between the ON and OFF states exceeding 10⁵, a long retention time of over 3 × 10⁴ s and a high endurance of over 10⁵ programming cycles whilst maintaining an I ON/I OFF ratio higher than 10³. This result may be promising for next-generation nonvolatile memory on flexible substrate applications.

Original language	English
Article number	205201
Journal	Nanotechnology
Volume	25
Issue number	20
DOIs	https://doi.org/10.1088/0957-4484/25/20/205201
State	Published - 23 May 2014

Keywords

ferroelectric memory
field effect transistor
Si nanowires

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10.1088/0957-4484/25/20/205201

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title = "Tunable threshold voltage of an n-type Si nanowire ferroelectric-gate field effect transistor for high-performance nonvolatile memory applications",

abstract = "We successfully fabricated ferroelectric-gate field effect transistor (FEFET)-based nonvolatile memory devices using an n-type Si nanowire coated with omega-shaped-gate organic ferroelectric poly(vinylidene fluoride- trifluoroethylene) via a low-temperature fabrication process. Our FEFET memory devices with controllable threshold voltage via adjustment of the doping concentration exhibit excellent memory characteristics with ultra-low ON state power dissipation (≦3 nW), a large modulation in channel conductance between the ON and OFF states exceeding 105, a long retention time of over 3 × 104 s and a high endurance of over 105 programming cycles whilst maintaining an I ON/I OFF ratio higher than 103. This result may be promising for next-generation nonvolatile memory on flexible substrate applications.",

keywords = "ferroelectric memory, field effect transistor, Si nanowires",

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T1 - Tunable threshold voltage of an n-type Si nanowire ferroelectric-gate field effect transistor for high-performance nonvolatile memory applications

AU - Van, Ngoc Huynh

AU - Lee, Jae Hyun

AU - Sohn, Jung Inn

AU - Cha, Seungnam

AU - Whang, Dongmok

AU - Kim, Jong Min

AU - Kang, Dae Joon

PY - 2014/5/23

Y1 - 2014/5/23

N2 - We successfully fabricated ferroelectric-gate field effect transistor (FEFET)-based nonvolatile memory devices using an n-type Si nanowire coated with omega-shaped-gate organic ferroelectric poly(vinylidene fluoride- trifluoroethylene) via a low-temperature fabrication process. Our FEFET memory devices with controllable threshold voltage via adjustment of the doping concentration exhibit excellent memory characteristics with ultra-low ON state power dissipation (≦3 nW), a large modulation in channel conductance between the ON and OFF states exceeding 105, a long retention time of over 3 × 104 s and a high endurance of over 105 programming cycles whilst maintaining an I ON/I OFF ratio higher than 103. This result may be promising for next-generation nonvolatile memory on flexible substrate applications.

AB - We successfully fabricated ferroelectric-gate field effect transistor (FEFET)-based nonvolatile memory devices using an n-type Si nanowire coated with omega-shaped-gate organic ferroelectric poly(vinylidene fluoride- trifluoroethylene) via a low-temperature fabrication process. Our FEFET memory devices with controllable threshold voltage via adjustment of the doping concentration exhibit excellent memory characteristics with ultra-low ON state power dissipation (≦3 nW), a large modulation in channel conductance between the ON and OFF states exceeding 105, a long retention time of over 3 × 104 s and a high endurance of over 105 programming cycles whilst maintaining an I ON/I OFF ratio higher than 103. This result may be promising for next-generation nonvolatile memory on flexible substrate applications.

KW - ferroelectric memory

KW - field effect transistor

KW - Si nanowires

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Tunable threshold voltage of an n-type Si nanowire ferroelectric-gate field effect transistor for high-performance nonvolatile memory applications

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Keywords

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