Tuning a Schottky barrier of epitaxial graphene/4H-SiC (0001) by hydrogen intercalation

P. Dharmaraj; P. Justin Jesuraj; K. Jeganathan

doi:10.1063/1.4941229

Tuning a Schottky barrier of epitaxial graphene/4H-SiC (0001) by hydrogen intercalation

P. Dharmaraj
, P. Justin Jesuraj
, K. Jeganathan

Department of Physics

Bharathidasan University

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

We report the electron transport properties of epitaxial graphene (EG) grown on 4H-SiC (0001) by low energy electron-beam irradiation. As-grown EG (AEG) on SiC interface exhibits rectifying current-voltage characteristics with a low Schottky barrier (SB) of 0.55 ± 0.05 eV and high reverse current leakage. The SB of AEG/SiC junction is extremely impeded by the Fermi level pinning (FLP) above the Dirac point due to charged states at the interface. Nevertheless, a gentle hydrogen intercalation at 900 °C enables the alleviation of both FLP and carrier scattering owing to the saturation of dangling bonds as evidenced by the enhancement of SB (0.75 ± 0.05 eV) and high electron mobility well excess of 6000 cm² V^-1 s^-1.

Original language	English
Article number	051605
Journal	Applied Physics Letters
Volume	108
Issue number	5
DOIs	https://doi.org/10.1063/1.4941229
State	Published - 1 Feb 2016

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title = "Tuning a Schottky barrier of epitaxial graphene/4H-SiC (0001) by hydrogen intercalation",

abstract = "We report the electron transport properties of epitaxial graphene (EG) grown on 4H-SiC (0001) by low energy electron-beam irradiation. As-grown EG (AEG) on SiC interface exhibits rectifying current-voltage characteristics with a low Schottky barrier (SB) of 0.55 ± 0.05 eV and high reverse current leakage. The SB of AEG/SiC junction is extremely impeded by the Fermi level pinning (FLP) above the Dirac point due to charged states at the interface. Nevertheless, a gentle hydrogen intercalation at 900 °C enables the alleviation of both FLP and carrier scattering owing to the saturation of dangling bonds as evidenced by the enhancement of SB (0.75 ± 0.05 eV) and high electron mobility well excess of 6000 cm2 V-1 s-1.",

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T1 - Tuning a Schottky barrier of epitaxial graphene/4H-SiC (0001) by hydrogen intercalation

AU - Dharmaraj, P.

AU - Justin Jesuraj, P.

AU - Jeganathan, K.

PY - 2016/2/1

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N2 - We report the electron transport properties of epitaxial graphene (EG) grown on 4H-SiC (0001) by low energy electron-beam irradiation. As-grown EG (AEG) on SiC interface exhibits rectifying current-voltage characteristics with a low Schottky barrier (SB) of 0.55 ± 0.05 eV and high reverse current leakage. The SB of AEG/SiC junction is extremely impeded by the Fermi level pinning (FLP) above the Dirac point due to charged states at the interface. Nevertheless, a gentle hydrogen intercalation at 900 °C enables the alleviation of both FLP and carrier scattering owing to the saturation of dangling bonds as evidenced by the enhancement of SB (0.75 ± 0.05 eV) and high electron mobility well excess of 6000 cm2 V-1 s-1.

AB - We report the electron transport properties of epitaxial graphene (EG) grown on 4H-SiC (0001) by low energy electron-beam irradiation. As-grown EG (AEG) on SiC interface exhibits rectifying current-voltage characteristics with a low Schottky barrier (SB) of 0.55 ± 0.05 eV and high reverse current leakage. The SB of AEG/SiC junction is extremely impeded by the Fermi level pinning (FLP) above the Dirac point due to charged states at the interface. Nevertheless, a gentle hydrogen intercalation at 900 °C enables the alleviation of both FLP and carrier scattering owing to the saturation of dangling bonds as evidenced by the enhancement of SB (0.75 ± 0.05 eV) and high electron mobility well excess of 6000 cm2 V-1 s-1.

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U2 - 10.1063/1.4941229

DO - 10.1063/1.4941229

M3 - Article

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Tuning a Schottky barrier of epitaxial graphene/4H-SiC (0001) by hydrogen intercalation

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