Tuning resistive switching parameters in Si₃N₄-based RRAM for three-dimensional vertical resistive memory applications

In this work, new 3D vertical RRAM device with silicon CMOS compatibility and the possible fabrication process are presented. RRAM devices based on Ni/Si₃N₄/p⁺-Si stack which are applicable in our proposed 3D vertical RRAM structure were fabricated in order to reveal the effects of switching layer thickness and compliant current on resistive switching parameters. Forming-less behavior can be easily achieved by controlling thickness of the Si₃N₄ layer. It is found that the high- and low-resistance state can be effectively modulated by the film thickness and compliance current, respectively.