TY - JOUR
T1 - Tuning tunnel barrier in Si3N4-based resistive memory embedding SiO2 for low-power and high-density cross-point array applications
AU - Kim, Sungjun
AU - Park, Byung Gook
N1 - Publisher Copyright:
© 2015 Elsevier B.V. All rights reserved.
PY - 2016/4/5
Y1 - 2016/4/5
N2 - In this paper, nonlinear and low-power resistive switching characteristics of Si3N4-based RRAM embedding SiO2 tunnel barrier (TB) with full compatibility to conventional Si CMOS processing have been extensively studied to solve crosstalk issue in a cross-point structure. It is found that the nonlinear characteristics of a simple metal-insulator-insulator-silicon (MIIS) structure are mainly attributed to two different tunneling mechanisms in the SiO2 layer. Furthermore, we offer an optimized solution by modulating compliance current (ICC), read voltage (VREAD), and TB thickness for higher selectivity. Low current operation tuned by ICC, VREAD, and TB thickness is essential to achieve higher selectivity for low-power and high-density cross-point array applications.
AB - In this paper, nonlinear and low-power resistive switching characteristics of Si3N4-based RRAM embedding SiO2 tunnel barrier (TB) with full compatibility to conventional Si CMOS processing have been extensively studied to solve crosstalk issue in a cross-point structure. It is found that the nonlinear characteristics of a simple metal-insulator-insulator-silicon (MIIS) structure are mainly attributed to two different tunneling mechanisms in the SiO2 layer. Furthermore, we offer an optimized solution by modulating compliance current (ICC), read voltage (VREAD), and TB thickness for higher selectivity. Low current operation tuned by ICC, VREAD, and TB thickness is essential to achieve higher selectivity for low-power and high-density cross-point array applications.
KW - Resistive random-access memory (RRAM)
KW - Silicon dioxide (SiO)
KW - Silicon nitride (SiN)
KW - Tunnel barrier
UR - http://www.scopus.com/inward/record.url?scp=84952684555&partnerID=8YFLogxK
U2 - 10.1016/j.jallcom.2015.12.107
DO - 10.1016/j.jallcom.2015.12.107
M3 - Article
AN - SCOPUS:84952684555
SN - 0925-8388
VL - 663
SP - 256
EP - 261
JO - Journal of Alloys and Compounds
JF - Journal of Alloys and Compounds
ER -