Two-Dimensional Metal-Semiconductor Field Effect Transistor for Ultra Low Power Circuit Applications

Engineering

• Two Dimensional 100%
• Current Drain 100%
• Heterojunctions 50%
• Indium Gallium Arsenide 50%
• Aluminium Gallium Arsenide 50%
• Room Temperature 50%
• Cutoff Frequency 50%
• Electric Power Utilization 50%
• Field Effect Transistor 50%
• Side Wall 50%

Material Science

• Electronic Circuit 100%
• Field Effect Transistor 100%
• Capacitance 66%
• Heterojunction 33%
• Indium Gallium Arsenide 33%
• Aluminium Gallium Arsenide 33%