@inproceedings{2272ac6931604956af492aeb4db0f2fd,
title = "Two-stage 94 GHz drive amplifiers using 0.1-μm metamorphic HEMT technology",
abstract = "In this paper, millimeter-wave 94 GHz drive amplifiers based on metamorphic high electron mobility transistors (MHEMTs) were designed and fabricated. The fabricated 100 nm gate length MHEMT devices exhibit DC characteristics with a drain current density of 690 mA/mm and an extrinsic transconductance of 770mS/mm. The current gain cutoff frequency (fT) and the maximum oscillation frequency (fmax) are 185 GHz and 230 GHz, respectively. The matching circuit of amplifier was designed using CPW (coplanar waveguide) transmission line. The fabricated amplifier shows a good S21 gain of 7.79 dB, an input return loss (S1l) of -16.5 dB and an output return loss (S22) of -15.9 dB.",
author = "Min Han and Moon, {Sung Woon} and Oh, {Jung Hun} and Lim, {Byeong Ok} and Baek, {Tae Jong} and Choi, {Seok Gyu} and Baek, {Young Hyun} and Chae, {Yeon Sik} and Park, {Hyun Chang} and Kim, {Sam Dong} and Jin, {Koo Rhee}",
year = "2008",
doi = "10.1109/GSMM.2008.4534543",
language = "English",
isbn = "9781424418855",
series = "2008 Global Symposium on Millimeter Waves, Proceeding, GSMM 2008",
publisher = "IEEE Computer Society",
pages = "10--13",
booktitle = "2008 Global Symposium on Millimeter Waves, Proceeding, GSMM 2008",
address = "United States",
note = "2008 Global Symposium on Millimeter Waves, GSMM 2008 ; Conference date: 21-04-2008 Through 24-04-2008",
}