Two-stage 94 GHz drive amplifiers using 0.1-μm metamorphic HEMT technology

Min Han, Sung Woon Moon, Jung Hun Oh, Byeong Ok Lim, Tae Jong Baek, Seok Gyu Choi, Young Hyun Baek, Yeon Sik Chae, Hyun Chang Park, Sam Dong Kim, Koo Rhee Jin

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this paper, millimeter-wave 94 GHz drive amplifiers based on metamorphic high electron mobility transistors (MHEMTs) were designed and fabricated. The fabricated 100 nm gate length MHEMT devices exhibit DC characteristics with a drain current density of 690 mA/mm and an extrinsic transconductance of 770mS/mm. The current gain cutoff frequency (fT) and the maximum oscillation frequency (fmax) are 185 GHz and 230 GHz, respectively. The matching circuit of amplifier was designed using CPW (coplanar waveguide) transmission line. The fabricated amplifier shows a good S21 gain of 7.79 dB, an input return loss (S1l) of -16.5 dB and an output return loss (S22) of -15.9 dB.

Original languageEnglish
Title of host publication2008 Global Symposium on Millimeter Waves, Proceeding, GSMM 2008
PublisherIEEE Computer Society
Pages10-13
Number of pages4
ISBN (Print)9781424418855
DOIs
StatePublished - 2008
Event2008 Global Symposium on Millimeter Waves, GSMM 2008 - Nanjing, China
Duration: 21 Apr 200824 Apr 2008

Publication series

Name2008 Global Symposium on Millimeter Waves, Proceeding, GSMM 2008

Conference

Conference2008 Global Symposium on Millimeter Waves, GSMM 2008
Country/TerritoryChina
CityNanjing
Period21/04/0824/04/08

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