Two-stage broadband high-gain W-band amplifier using 0.1-μm metamorphic HEMT technology

Bok Hyung Lee; Dan An; Mun Kyo Lee; Byeong Ok Lim; Sam Dong Kim; Jin Koo Rhee

doi:10.1109/LED.2004.838506

Two-stage broadband high-gain W-band amplifier using 0.1-μm metamorphic HEMT technology

Bok Hyung Lee, Dan An, Mun Kyo Lee, Byeong Ok Lim, Sam Dong Kim, Jin Koo Rhee

Department of Electronics & Electrical Engineering

Millimtr.-wave Inov. Tech. Res. Ctr.

Research output: Contribution to journal › Article › peer-review

35 Scopus citations

Abstract

We report broadband high-gain W-band monolithic microwave integrated circuit amplifiers based on 0.1-μm InGaAs-InAlAs-GaAs metamorphic high electron mobility transistor (MHEMT) technology. The amplifiers show excellent S₂₁ gains greater than 10 dB in a very broad W-band frequency range of 75-100 GHz, thereby exhibiting a S₂₁ gain of 10.1 dB, a S₁₁ of -5.1 dB and a S₂₂ of -5.2 dB at 100 GHz, respectively. The high gain of the amplifier is mainly attributed to the performance of the MHEMTs exhibiting a maximum transconductance of 691 mS/mm, a current gain cutoff frequency of 189 GHz, and a maximum oscillation frequency of 334 GHz.

Original language	English
Pages (from-to)	766-768
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	25
Issue number	12
DOIs	https://doi.org/10.1109/LED.2004.838506
State	Published - Dec 2004

Keywords

0.1-μm metamorphic high electron mobility transistor (MHEMT)
Broadband amplifier
W-band

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10.1109/LED.2004.838506

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title = "Two-stage broadband high-gain W-band amplifier using 0.1-μm metamorphic HEMT technology",

abstract = "We report broadband high-gain W-band monolithic microwave integrated circuit amplifiers based on 0.1-μm InGaAs-InAlAs-GaAs metamorphic high electron mobility transistor (MHEMT) technology. The amplifiers show excellent S21 gains greater than 10 dB in a very broad W-band frequency range of 75-100 GHz, thereby exhibiting a S21 gain of 10.1 dB, a S11 of -5.1 dB and a S22 of -5.2 dB at 100 GHz, respectively. The high gain of the amplifier is mainly attributed to the performance of the MHEMTs exhibiting a maximum transconductance of 691 mS/mm, a current gain cutoff frequency of 189 GHz, and a maximum oscillation frequency of 334 GHz.",

keywords = "0.1-μm metamorphic high electron mobility transistor (MHEMT), Broadband amplifier, W-band",

author = "Lee, {Bok Hyung} and Dan An and Lee, {Mun Kyo} and Lim, {Byeong Ok} and Kim, {Sam Dong} and Rhee, {Jin Koo}",

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T1 - Two-stage broadband high-gain W-band amplifier using 0.1-μm metamorphic HEMT technology

AU - Lee, Bok Hyung

AU - An, Dan

AU - Lee, Mun Kyo

AU - Lim, Byeong Ok

AU - Kim, Sam Dong

AU - Rhee, Jin Koo

PY - 2004/12

Y1 - 2004/12

N2 - We report broadband high-gain W-band monolithic microwave integrated circuit amplifiers based on 0.1-μm InGaAs-InAlAs-GaAs metamorphic high electron mobility transistor (MHEMT) technology. The amplifiers show excellent S21 gains greater than 10 dB in a very broad W-band frequency range of 75-100 GHz, thereby exhibiting a S21 gain of 10.1 dB, a S11 of -5.1 dB and a S22 of -5.2 dB at 100 GHz, respectively. The high gain of the amplifier is mainly attributed to the performance of the MHEMTs exhibiting a maximum transconductance of 691 mS/mm, a current gain cutoff frequency of 189 GHz, and a maximum oscillation frequency of 334 GHz.

AB - We report broadband high-gain W-band monolithic microwave integrated circuit amplifiers based on 0.1-μm InGaAs-InAlAs-GaAs metamorphic high electron mobility transistor (MHEMT) technology. The amplifiers show excellent S21 gains greater than 10 dB in a very broad W-band frequency range of 75-100 GHz, thereby exhibiting a S21 gain of 10.1 dB, a S11 of -5.1 dB and a S22 of -5.2 dB at 100 GHz, respectively. The high gain of the amplifier is mainly attributed to the performance of the MHEMTs exhibiting a maximum transconductance of 691 mS/mm, a current gain cutoff frequency of 189 GHz, and a maximum oscillation frequency of 334 GHz.

KW - 0.1-μm metamorphic high electron mobility transistor (MHEMT)

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KW - W-band

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DO - 10.1109/LED.2004.838506

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JO - IEEE Electron Device Letters

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Two-stage broadband high-gain W-band amplifier using 0.1-μm metamorphic HEMT technology

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Keywords

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