Two-stage high gain W-band amplifier using metamorphic HEMT technology

Bok Hyung Lee; Dan-An; Mun Kyo Lee; Byeong Ok Lim; Sam Dong Kim; Jin Koo Rhee

Two-stage high gain W-band amplifier using metamorphic HEMT technology

Bok Hyung Lee, Dan-An, Mun Kyo Lee, Byeong Ok Lim, Sam Dong Kim, Jin Koo Rhee

Department of Electronics & Electrical Engineering

Dongguk University

Research output: Contribution to journal › Conference article › peer-review

Abstract

In this paper, we shows a W-band (75-110 GHz) application of metamorphic HEMTs (MHEMTs). We fabricated two stage MIMIC amplifier using 0.1 μm InGaAs/InAlAs/GaAs MHEMT technology. The performances of MHEMT show a drain current density (I_dss) of 643 mA/mm, maximum transconductance (gm,max) of 650 mS/mm, the current gain cut-off frequency (f_t) of 172 GHz and the maximum oscillation frequency (f_max) of 271 GHz. The W-band amplifier was designed using CPW line and non-linear model technologies. The measured results of the W-band MIMIC amplifiers show 821 gain of 10.1 dB, S₁₁ of-5.1 dB and 822 of-5.2 dB at 100 GHz, respectively.

Original language	English
Pages (from-to)	39-42
Number of pages	4
Journal	Institute of Physics Conference Series
Volume	184
State	Published - 2005
Event	31st International Symposium of Compound Semiconductors 2004 - Seoul, Korea, Republic of Duration: 12 Sep 2004 → 16 Dec 2004

Cite this

@article{6c7ceb4b606746a6b6b0bca8e3ad0f09,

title = "Two-stage high gain W-band amplifier using metamorphic HEMT technology",

abstract = "In this paper, we shows a W-band (75-110 GHz) application of metamorphic HEMTs (MHEMTs). We fabricated two stage MIMIC amplifier using 0.1 μm InGaAs/InAlAs/GaAs MHEMT technology. The performances of MHEMT show a drain current density (Idss) of 643 mA/mm, maximum transconductance (gm,max) of 650 mS/mm, the current gain cut-off frequency (ft) of 172 GHz and the maximum oscillation frequency (fmax) of 271 GHz. The W-band amplifier was designed using CPW line and non-linear model technologies. The measured results of the W-band MIMIC amplifiers show 821 gain of 10.1 dB, S11 of-5.1 dB and 822 of-5.2 dB at 100 GHz, respectively.",

author = "Lee, {Bok Hyung} and Dan-An and Lee, {Mun Kyo} and Lim, {Byeong Ok} and Kim, {Sam Dong} and Rhee, {Jin Koo}",

year = "2005",

language = "English",

volume = "184",

pages = "39--42",

journal = "Institute of Physics Conference Series",

issn = "0951-3248",

publisher = "IOP Publishing Ltd.",

note = "31st International Symposium of Compound Semiconductors 2004 ; Conference date: 12-09-2004 Through 16-12-2004",

}

TY - JOUR

T1 - Two-stage high gain W-band amplifier using metamorphic HEMT technology

AU - Lee, Bok Hyung

AU - Dan-An,

AU - Lee, Mun Kyo

AU - Lim, Byeong Ok

AU - Kim, Sam Dong

AU - Rhee, Jin Koo

PY - 2005

Y1 - 2005

N2 - In this paper, we shows a W-band (75-110 GHz) application of metamorphic HEMTs (MHEMTs). We fabricated two stage MIMIC amplifier using 0.1 μm InGaAs/InAlAs/GaAs MHEMT technology. The performances of MHEMT show a drain current density (Idss) of 643 mA/mm, maximum transconductance (gm,max) of 650 mS/mm, the current gain cut-off frequency (ft) of 172 GHz and the maximum oscillation frequency (fmax) of 271 GHz. The W-band amplifier was designed using CPW line and non-linear model technologies. The measured results of the W-band MIMIC amplifiers show 821 gain of 10.1 dB, S11 of-5.1 dB and 822 of-5.2 dB at 100 GHz, respectively.

AB - In this paper, we shows a W-band (75-110 GHz) application of metamorphic HEMTs (MHEMTs). We fabricated two stage MIMIC amplifier using 0.1 μm InGaAs/InAlAs/GaAs MHEMT technology. The performances of MHEMT show a drain current density (Idss) of 643 mA/mm, maximum transconductance (gm,max) of 650 mS/mm, the current gain cut-off frequency (ft) of 172 GHz and the maximum oscillation frequency (fmax) of 271 GHz. The W-band amplifier was designed using CPW line and non-linear model technologies. The measured results of the W-band MIMIC amplifiers show 821 gain of 10.1 dB, S11 of-5.1 dB and 822 of-5.2 dB at 100 GHz, respectively.

UR - http://www.scopus.com/inward/record.url?scp=33644551849&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:33644551849

SN - 0951-3248

VL - 184

SP - 39

EP - 42

JO - Institute of Physics Conference Series

JF - Institute of Physics Conference Series

T2 - 31st International Symposium of Compound Semiconductors 2004

Y2 - 12 September 2004 through 16 December 2004

ER -

Two-stage high gain W-band amplifier using metamorphic HEMT technology

Abstract

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