TY - JOUR
T1 - Ultra-low temperature sensitive deep-well quantum cascade lasers (λ=4.8m) via uptapering conduction band edge of injector regions
AU - Shin, J. C.
AU - Mawst, L. J.
AU - Botez, D.
AU - Vurgaftman, I.
AU - Meyer, J. R.
PY - 2009
Y1 - 2009
N2 - A new design feature for deep-well quantum cascade (QC) lasers, in which the conduction band edge of the injector region is uptapered, results in virtual suppression of carrier leakage out of the active regions of 4.8m emitting devices. For heatsink temperatures in the 20-90°C range the characteristic temperature coefficients for threshold, T0, and slope efficiency, T1, reach values as high as 278 and 285K, respectively, which are nearly twice the values for conventional QC lasers. At 20°C, the threshold current density for uncoated, 30 period, 3mm-long devices is only ∼1.8kA/cm2.
AB - A new design feature for deep-well quantum cascade (QC) lasers, in which the conduction band edge of the injector region is uptapered, results in virtual suppression of carrier leakage out of the active regions of 4.8m emitting devices. For heatsink temperatures in the 20-90°C range the characteristic temperature coefficients for threshold, T0, and slope efficiency, T1, reach values as high as 278 and 285K, respectively, which are nearly twice the values for conventional QC lasers. At 20°C, the threshold current density for uncoated, 30 period, 3mm-long devices is only ∼1.8kA/cm2.
UR - http://www.scopus.com/inward/record.url?scp=67650290528&partnerID=8YFLogxK
U2 - 10.1049/el.2009.1393
DO - 10.1049/el.2009.1393
M3 - Article
AN - SCOPUS:67650290528
SN - 0013-5194
VL - 45
SP - 741
EP - 743
JO - Electronics Letters
JF - Electronics Letters
IS - 14
ER -