TY - GEN
T1 - Ultra-stacked Forksheet-FET and Monolithic Complementary-FET for Å7~5 node Visibility
AU - Lee, J.
AU - Eom, S.
AU - Kim, M.
AU - Ahn, Y.
AU - Lee, S.
AU - Jeong, J.
AU - Lee, S.
AU - Baek, R. H.
N1 - Publisher Copyright:
© 2024 IEEE.
PY - 2024
Y1 - 2024
N2 - For the first time, we comprehensively compared the competitiveness of ultra-stacked forksheet-FET (FS) and monolithic complementary-FET (CF) for Å7~5 nodes. Assuming nanosheet-FET (NS) in Å10 node, ultra-stacked (>4) FS does not show meaningful area scaling over 4stack FS (FS4) in high-density (HD) applications of Å7. However, in high-performance (HP) of Å7, FS5 shows a large scaling over FS4 with small performance (Perf) degradation. CF3 still has a smaller area than FS5 but has worse Perf and larger process cost (PC), undermining the PPAC (Power-Perf-Area-Cost) of CF3. In Å5, however, FS can be replaced by CF4 or functional symmetry CF (CFS) in terms of PPA.
AB - For the first time, we comprehensively compared the competitiveness of ultra-stacked forksheet-FET (FS) and monolithic complementary-FET (CF) for Å7~5 nodes. Assuming nanosheet-FET (NS) in Å10 node, ultra-stacked (>4) FS does not show meaningful area scaling over 4stack FS (FS4) in high-density (HD) applications of Å7. However, in high-performance (HP) of Å7, FS5 shows a large scaling over FS4 with small performance (Perf) degradation. CF3 still has a smaller area than FS5 but has worse Perf and larger process cost (PC), undermining the PPAC (Power-Perf-Area-Cost) of CF3. In Å5, however, FS can be replaced by CF4 or functional symmetry CF (CFS) in terms of PPA.
UR - http://www.scopus.com/inward/record.url?scp=86000018233&partnerID=8YFLogxK
U2 - 10.1109/IEDM50854.2024.10873498
DO - 10.1109/IEDM50854.2024.10873498
M3 - Conference contribution
AN - SCOPUS:86000018233
T3 - Technical Digest - International Electron Devices Meeting, IEDM
BT - 2024 IEEE International Electron Devices Meeting, IEDM 2024
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2024 IEEE International Electron Devices Meeting, IEDM 2024
Y2 - 7 December 2024 through 11 December 2024
ER -