TY - JOUR
T1 - Ultra-thin dielectric breakdown in devices and circuits
T2 - A brief review
AU - Ho, Chih Hsiang
AU - Kim, Soo Youn
AU - Roy, Kaushik
N1 - Publisher Copyright:
© 2014 Elsevier Ltd.
PY - 2015/2/1
Y1 - 2015/2/1
N2 - Time-dependent dielectric breakdown (TDDB), in which the traps in oxide bulk form a conducting path under application of stress voltage for long period of time, has emerged as one of the important sources of performance degradation in advanced devices. In this paper, we give an overview of the recent progress in the understanding of ultra-thin dielectric breakdown in devices and consider its impact at the circuit-level. From the device point of view, the breakdown (BD) phenomenon, including the BD statistics, trap generation models, and BD evolution in ultra-thin dielectric are presented followed by the recent studies on TDDB in high-k metal gate (HKMG) devices and magnetic tunnel junction (MTJ) memories. On the circuit side, we explore methodologies for circuit lifetime assessment, the impact of TDDB on circuit performance degradation, and design techniques to improve circuit reliability.
AB - Time-dependent dielectric breakdown (TDDB), in which the traps in oxide bulk form a conducting path under application of stress voltage for long period of time, has emerged as one of the important sources of performance degradation in advanced devices. In this paper, we give an overview of the recent progress in the understanding of ultra-thin dielectric breakdown in devices and consider its impact at the circuit-level. From the device point of view, the breakdown (BD) phenomenon, including the BD statistics, trap generation models, and BD evolution in ultra-thin dielectric are presented followed by the recent studies on TDDB in high-k metal gate (HKMG) devices and magnetic tunnel junction (MTJ) memories. On the circuit side, we explore methodologies for circuit lifetime assessment, the impact of TDDB on circuit performance degradation, and design techniques to improve circuit reliability.
KW - Breakdown statistics
KW - Circuit lifetime prediction
KW - Compact model
KW - Magnetic tunnel junction (MTJ)
KW - Time-dependent dielectric breakdown (TDDB)
KW - Ultra-thin dielectric
UR - http://www.scopus.com/inward/record.url?scp=84921465537&partnerID=8YFLogxK
U2 - 10.1016/j.microrel.2014.10.019
DO - 10.1016/j.microrel.2014.10.019
M3 - Article
AN - SCOPUS:84921465537
SN - 0026-2714
VL - 55
SP - 308
EP - 317
JO - Microelectronics Reliability
JF - Microelectronics Reliability
IS - 2
ER -