Ultrahigh Mobility in Solution-Processed Solid-State Electrolyte-Gated Transistors

Researchers report a solid-state electrolyte gate insulators (SEGIs) medium formed by a controlled blend consisting of the high-k polymer poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) and the ion gel based on poly(vinylidene fluoride-co-hexafluoropropylene) (P(VDF-HFP)) with [EMIM][TFSI], achieving remarkable FET performance in top gate/bottom contacts (TGBC) devices for an ample set of common conjugated polymers. The engineered SEGIs enable large charge-carrier mobilities owing to the formation of a robust gate electrode and gate dielectric interface due to the solid-state nature of the dielectric film and an enhanced charge-carrier density in the transistor channel thanks to the high-k polymer component and the facile movement of well-dispersed ions in the gate dielectric layer, allowing high capacitance values of >4 &F cm^-2 to be achieved.