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Ultrathin high-k gate dielectric films on strained-si/sige heterolayers
M. K. Bera
,
C. Mahata
, C. K. Maiti
Department of Electronics & Electrical Engineering
City University of Hong Kong
Indian Institute of Technology Kharagpur
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peer-review
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Material Science
Dielectric Material
100%
Dielectric Films
100%
Capacitor
66%
Point Defect
66%
Film
33%
Zirconia
33%
Titanium Dioxide
33%
Permittivity
33%
Defect Density
33%
Electrical Breakdown
33%
Heteroepitaxy
33%