Abstract
We present the first active visible blind ultraviolet (UV) photodetector based on zinc oxide (ZnO) nanostructured AlGaN/GaN high electron mobility transistors (HEMTs). The ZnO nanorods (NRs) are selectively grown on the gate area by using hydrothermal method. It is shown that ZnO nanorod (NR)-gated UV detectors exhibit much superior performance in terms of response speed and recovery time to those of seed-layer-gated detectors. It is also found that the best response speed (∼10 and∼190 ms) and responsivity (~1.1×105 A/W) were observed from detectors of the shortest gate length of 2 μm among our NR-gated devices of three different gate dimensions, and this responsivity is about one order higher than the best performance of ZnO NR-based UV detectors reported to date.
Original language | English |
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Pages (from-to) | 71-77 |
Number of pages | 7 |
Journal | Materials Science in Semiconductor Processing |
Volume | 44 |
DOIs | |
State | Published - 15 Mar 2016 |
Keywords
- AlGaN/GaN HEMT
- Gate length effect
- High responsivity
- Response speed
- UV detector
- ZnO nanorods