Understanding reset transitions in Ni/SiN_x/Si resistive random-access memory

In this study, we examine the reset switching behaviors of a bipolar resistive random-access memory (RRAM) system housed in a Ni/SiN_x/p⁺ Si structure. Low compliance current without a severe overshoot could lead to gradual reset switching that occurs with a current drop via multi-step processes different from those present in an abrupt reset with a large conducting path that is suddenly ruptured by Joule heating. It is found that multiple quantized conductance plateaus are clearly observed only in gradual reset switching. The set and reset power are important parameters that distinguish between abrupt and gradual reset switching. The different properties of conducting paths can be explained by the power law relationship. Before gradual reset switching occurs, the nonlinear I–V characteristic of the low-resistance state is one of the most beneficial merits of the cross-point array structure.