Uniformity improvement of SiNjc-based resistive switching memory by suppressed internal overshoot current

Min Hwi Kim, Sungjun Kim, Suhyun Bang, Tae Hyeon Kim, Dong Keun Lee, Seongjae Cho, Jong Ho Lee, Byung Gook Park

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this work, we have investigated the effect of thin SiO2 layer on switching variability of SiNx-based RRAM. We found that recessive LRS state generated in set operation results in large reset current and abrupt reset operation. The abrupt reset operation leads to large HRS distribution. To investigate the transient characteristics of switching process in detail, measurement environment is implemented with equivalent circuit and measured current from equipment is separated to capacitive and resistive current element. Consequently, we point the internal overshoot current occurred in set operation as the cause of switching variability and large distribution.

Original languageEnglish
Title of host publication2017 Silicon Nanoelectronics Workshop, SNW 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages19-20
Number of pages2
ISBN (Electronic)9784863486478
DOIs
StatePublished - 29 Dec 2017
Event22nd Silicon Nanoelectronics Workshop, SNW 2017 - Kyoto, Japan
Duration: 4 Jun 20175 Jun 2017

Publication series

Name2017 Silicon Nanoelectronics Workshop, SNW 2017
Volume2017-January

Conference

Conference22nd Silicon Nanoelectronics Workshop, SNW 2017
Country/TerritoryJapan
CityKyoto
Period4/06/175/06/17

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