@inproceedings{9758b0af46ab43c0a5645874e44fceb4,
title = "Uniformity improvement of SiNjc-based resistive switching memory by suppressed internal overshoot current",
abstract = "In this work, we have investigated the effect of thin SiO2 layer on switching variability of SiNx-based RRAM. We found that recessive LRS state generated in set operation results in large reset current and abrupt reset operation. The abrupt reset operation leads to large HRS distribution. To investigate the transient characteristics of switching process in detail, measurement environment is implemented with equivalent circuit and measured current from equipment is separated to capacitive and resistive current element. Consequently, we point the internal overshoot current occurred in set operation as the cause of switching variability and large distribution.",
author = "Kim, {Min Hwi} and Sungjun Kim and Suhyun Bang and Kim, {Tae Hyeon} and Lee, {Dong Keun} and Seongjae Cho and Lee, {Jong Ho} and Park, {Byung Gook}",
note = "Publisher Copyright: {\textcopyright} 2017 JSAP.; 22nd Silicon Nanoelectronics Workshop, SNW 2017 ; Conference date: 04-06-2017 Through 05-06-2017",
year = "2017",
month = dec,
day = "29",
doi = "10.23919/SNW.2017.8242276",
language = "English",
series = "2017 Silicon Nanoelectronics Workshop, SNW 2017",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "19--20",
booktitle = "2017 Silicon Nanoelectronics Workshop, SNW 2017",
address = "United States",
}