Unipolar resistive switching in insulating niobium oxide film and probing electroforming induced metallic components

Kyooho Jung; Yongmin Kim; Young S. Park; Woong Jung; Jungae Choi; Baeho Park; Hyungsang Kim; Wondong Kim; Jinpyo Hong; Hyunsik Im

doi:10.1063/1.3552980

Unipolar resistive switching in insulating niobium oxide film and probing electroforming induced metallic components

Kyooho Jung
, Yongmin Kim
, Young S. Park
, Woong Jung
, Jungae Choi
, Baeho Park
, Hyungsang Kim
, Wondong Kim
, Jinpyo Hong
, Hyunsik Im

Division of System Semiconductor

Research output: Contribution to journal › Article › peer-review

38 Scopus citations

Abstract

We have observed unipolar-type resistance switching in an ultrathin niobium oxide film. An analysis of the temperature dependence of the resistance switching transport revealed that low-resistance state showed a type of electrical conduction typically observed in metals. The modification in chemical binding states of the film in different resistance states was studied using x-ray photoelectron spectroscopy. The analysis of XPS showed that metallic suboxides NbO (δ ≪ 2), decomposed from some of Nb₂O ₅ and NbO₂ components of the film, were created after electroforming process, suggesting that the metallic suboxides are constituting elements of metallic channels in the low resistance state.

Original language	English
Article number	054511
Journal	Journal of Applied Physics
Volume	109
Issue number	5
DOIs	https://doi.org/10.1063/1.3552980
State	Published - 1 Mar 2011

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title = "Unipolar resistive switching in insulating niobium oxide film and probing electroforming induced metallic components",

abstract = "We have observed unipolar-type resistance switching in an ultrathin niobium oxide film. An analysis of the temperature dependence of the resistance switching transport revealed that low-resistance state showed a type of electrical conduction typically observed in metals. The modification in chemical binding states of the film in different resistance states was studied using x-ray photoelectron spectroscopy. The analysis of XPS showed that metallic suboxides NbO (δ ≪ 2), decomposed from some of Nb2O 5 and NbO2 components of the film, were created after electroforming process, suggesting that the metallic suboxides are constituting elements of metallic channels in the low resistance state.",

author = "Kyooho Jung and Yongmin Kim and Park, \{Young S.\} and Woong Jung and Jungae Choi and Baeho Park and Hyungsang Kim and Wondong Kim and Jinpyo Hong and Hyunsik Im",

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AU - Jung, Kyooho

AU - Kim, Yongmin

AU - Park, Young S.

AU - Jung, Woong

AU - Choi, Jungae

AU - Park, Baeho

AU - Kim, Hyungsang

AU - Kim, Wondong

AU - Hong, Jinpyo

AU - Im, Hyunsik

PY - 2011/3/1

Y1 - 2011/3/1

N2 - We have observed unipolar-type resistance switching in an ultrathin niobium oxide film. An analysis of the temperature dependence of the resistance switching transport revealed that low-resistance state showed a type of electrical conduction typically observed in metals. The modification in chemical binding states of the film in different resistance states was studied using x-ray photoelectron spectroscopy. The analysis of XPS showed that metallic suboxides NbO (δ ≪ 2), decomposed from some of Nb2O 5 and NbO2 components of the film, were created after electroforming process, suggesting that the metallic suboxides are constituting elements of metallic channels in the low resistance state.

AB - We have observed unipolar-type resistance switching in an ultrathin niobium oxide film. An analysis of the temperature dependence of the resistance switching transport revealed that low-resistance state showed a type of electrical conduction typically observed in metals. The modification in chemical binding states of the film in different resistance states was studied using x-ray photoelectron spectroscopy. The analysis of XPS showed that metallic suboxides NbO (δ ≪ 2), decomposed from some of Nb2O 5 and NbO2 components of the film, were created after electroforming process, suggesting that the metallic suboxides are constituting elements of metallic channels in the low resistance state.

UR - https://www.scopus.com/pages/publications/79953012810

U2 - 10.1063/1.3552980

DO - 10.1063/1.3552980

M3 - Article

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SN - 0021-8979

VL - 109

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 5

M1 - 054511

ER -

Unipolar resistive switching in insulating niobium oxide film and probing electroforming induced metallic components

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