Abstract
In recent decades, solution-processable, printable oxide thin-film transistors have garnered a tremendous amount of attention given their potential for use in low-cost, large-area electronics. However, printable metallic source/drain electrodes undergo undesirable electrical/thermal migration at an interfacial stack of the oxide semiconductor and metal electrode. In this study, we report oleic acid-capped Ag nanoparticles that effectively suppress the significant Ag migration and facilitate high field-effect mobilities in oxide transistors. The origin of the role of surface-capped Ag nanoparticles is clarified with comparative studies based on X-ray photoelectron spectroscopy and X-ray absorption spectroscopy.
Original language | English |
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Pages (from-to) | 14058-14066 |
Number of pages | 9 |
Journal | ACS Applied Materials and Interfaces |
Volume | 9 |
Issue number | 16 |
DOIs | |
State | Published - 26 Apr 2017 |
Keywords
- Ag
- migration
- solution-process
- transistor