Velocity saturation effects in a short channel si-MOSFET and its small signal characteristics

Sanghoon Hwang, Hyunsik Im, Minkyu Song, Koichi Ishida, Toshiro Hiramoto, Takayasu Sakurai

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

We fabricated a Si Metal Oxide Semiconductor Field Effect Transistor with a 0.18 μm gate length and analyzed its transport considering the velocity saturation effect. We found that the saturation current (Idsat) transport shows a fractional power dependence on the gate voltage (V gs), namely, it follows the α-power law MOSFET model, I dsat = Bx (Vgs - VTH)α. The main model parameters α and B were extracted from the measured I dsat - Vgs characteristics. The value of α was around 1.6. The channel length modulation factor (λ) and gate trans-conductance (gm) were investigated as functions of V gs. We also present the small signal characteristics by using a simple analog amplifier circuit consisting of one transistor and one resistor, demonstrating that a small signal can be well modeled by using the α-power law MOSFET model.

Original languageEnglish
Pages (from-to)581-584
Number of pages4
JournalJournal of the Korean Physical Society
Volume55
Issue number2
DOIs
StatePublished - Aug 2009

Keywords

  • Mos devices
  • Short-channel effects
  • Velocity saturation

Fingerprint

Dive into the research topics of 'Velocity saturation effects in a short channel si-MOSFET and its small signal characteristics'. Together they form a unique fingerprint.

Cite this