Abstract
We fabricated a Si Metal Oxide Semiconductor Field Effect Transistor with a 0.18 μm gate length and analyzed its transport considering the velocity saturation effect. We found that the saturation current (Idsat) transport shows a fractional power dependence on the gate voltage (V gs), namely, it follows the α-power law MOSFET model, I dsat = Bx (Vgs - VTH)α. The main model parameters α and B were extracted from the measured I dsat - Vgs characteristics. The value of α was around 1.6. The channel length modulation factor (λ) and gate trans-conductance (gm) were investigated as functions of V gs. We also present the small signal characteristics by using a simple analog amplifier circuit consisting of one transistor and one resistor, demonstrating that a small signal can be well modeled by using the α-power law MOSFET model.
Original language | English |
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Pages (from-to) | 581-584 |
Number of pages | 4 |
Journal | Journal of the Korean Physical Society |
Volume | 55 |
Issue number | 2 |
DOIs | |
State | Published - Aug 2009 |
Keywords
- Mos devices
- Short-channel effects
- Velocity saturation