Abstract
The effect of a triple metal-gate (TMG) on the performance and on the ambipolar current in a TMG vertical tunnel field-effect transistor with triple metal-gate (TMG-TFET) is investigated using technology computer-aided design simulation. The TMG-TFET is designed to tackle the performance as well as the ambipolar current, simultaneously, by modulating the TMG parameters-the work function of the TMG and/or the length of each MG-that have critical impacts on the energy-band diagrams of the channel region. The tempered on-/off-current ratio of 10-8 and the steep average subthreshold slope of 43.5 mV/decade at a power supply voltage of 0.5 V are ascribed to the formation of an energy barrier in the channel by the optimal device parameters. It is found that two main flaws in a conventional (single-material gate) TFET, which are the degraded on-state current and the ambipolar current, can be successfully controlled by adjusting the TMG structure.
Original language | English |
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Article number | 7727981 |
Pages (from-to) | 5030-5035 |
Number of pages | 6 |
Journal | IEEE Transactions on Electron Devices |
Volume | 63 |
Issue number | 12 |
DOIs | |
State | Published - Dec 2016 |
Keywords
- Ambipolar current regulation
- gate-length engineering
- triple metal-gate (TMG) tunnel FET (TFET)
- vertical TFET
- Work-function engineering