Voltage-pulse induced resistance switching characteristics in a Cr-doped SrZrO3

Min Kyu Yang, Kyooho Jung, Yongmin Kim, Tae Kuk Ko, Hyunsik Im, Jae Wan Park, Jeon Kook Lee

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

The time resolved bipolar resistance switching in a Pt/Cr-doped SrZrO 3/SrRuO3 device has been investigated using pulse voltage. The required switching time between the high and low resistance states (HRS and LRS) is studied as a function of the pulse height and width. The resistance switching is found to be less dependent on the pulse height in the short pulse region. For LRS →HRS and HRS →LRS switching minimum switching times of ∼500 and ∼100 ns are required respectively, at a pulse height above the dc switching voltage. The authors attribute the distinction in the switching time to different switching mechanisms.

Original languageEnglish
Article number111101
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume49
Issue number11
DOIs
StatePublished - Nov 2010

Fingerprint

Dive into the research topics of 'Voltage-pulse induced resistance switching characteristics in a Cr-doped SrZrO3'. Together they form a unique fingerprint.

Cite this