VTCMOS Characteristics and Its Optimum Conditions Predicted by a Compact Analytical Model

Hyunsik Im; Takashi Inukai; Hiroyuki Gomyo; Toshiro Hiramoto; Takayasu Sakurai

doi:10.1109/TVLSI.2003.814320

VTCMOS Characteristics and Its Optimum Conditions Predicted by a Compact Analytical Model

Hyunsik Im, Takashi Inukai, Hiroyuki Gomyo, Toshiro Hiramoto, Takayasu Sakurai

Division of System Semiconductor

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

A compact analytical model of variable-threshold-voltage CMOS (VTCMOS) is proposed to study the active on current, linking it with the standby off-current characteristics. Comparisons of modeled results to both numerical simulations and experimental data are made with an excellent agreement. It is clearly demonstrated using the model that speed degradation due to low supply voltage can be compensated by the VTCMOS scheme, even with smaller power. Influence of the short channel effect (SCE) on the performance of VTCMOS is investigated in terms of a new parameter, dS/dγ, both qualitatively and quantitatively. It is found that the SCE degrades the VTCMOS performance. Issues on the optimum conditions of VTCMOS and the performance of seriesconnected VTCMOS circuits are also discussed.

Original language	English
Pages (from-to)	755-761
Number of pages	7
Journal	IEEE Transactions on Very Large Scale Integration (VLSI) Systems
Volume	11
Issue number	5
DOIs	https://doi.org/10.1109/TVLSI.2003.814320
State	Published - Oct 2003

Keywords

Analytical model
Body effect
Low power
Substrate bias
Variable-threshold-voltage CMOS (VTCMOS)

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10.1109/TVLSI.2003.814320

Cite this

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title = "VTCMOS Characteristics and Its Optimum Conditions Predicted by a Compact Analytical Model",

abstract = "A compact analytical model of variable-threshold-voltage CMOS (VTCMOS) is proposed to study the active on current, linking it with the standby off-current characteristics. Comparisons of modeled results to both numerical simulations and experimental data are made with an excellent agreement. It is clearly demonstrated using the model that speed degradation due to low supply voltage can be compensated by the VTCMOS scheme, even with smaller power. Influence of the short channel effect (SCE) on the performance of VTCMOS is investigated in terms of a new parameter, dS/dγ, both qualitatively and quantitatively. It is found that the SCE degrades the VTCMOS performance. Issues on the optimum conditions of VTCMOS and the performance of seriesconnected VTCMOS circuits are also discussed.",

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author = "Hyunsik Im and Takashi Inukai and Hiroyuki Gomyo and Toshiro Hiramoto and Takayasu Sakurai",

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T1 - VTCMOS Characteristics and Its Optimum Conditions Predicted by a Compact Analytical Model

AU - Im, Hyunsik

AU - Inukai, Takashi

AU - Gomyo, Hiroyuki

AU - Hiramoto, Toshiro

AU - Sakurai, Takayasu

PY - 2003/10

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N2 - A compact analytical model of variable-threshold-voltage CMOS (VTCMOS) is proposed to study the active on current, linking it with the standby off-current characteristics. Comparisons of modeled results to both numerical simulations and experimental data are made with an excellent agreement. It is clearly demonstrated using the model that speed degradation due to low supply voltage can be compensated by the VTCMOS scheme, even with smaller power. Influence of the short channel effect (SCE) on the performance of VTCMOS is investigated in terms of a new parameter, dS/dγ, both qualitatively and quantitatively. It is found that the SCE degrades the VTCMOS performance. Issues on the optimum conditions of VTCMOS and the performance of seriesconnected VTCMOS circuits are also discussed.

AB - A compact analytical model of variable-threshold-voltage CMOS (VTCMOS) is proposed to study the active on current, linking it with the standby off-current characteristics. Comparisons of modeled results to both numerical simulations and experimental data are made with an excellent agreement. It is clearly demonstrated using the model that speed degradation due to low supply voltage can be compensated by the VTCMOS scheme, even with smaller power. Influence of the short channel effect (SCE) on the performance of VTCMOS is investigated in terms of a new parameter, dS/dγ, both qualitatively and quantitatively. It is found that the SCE degrades the VTCMOS performance. Issues on the optimum conditions of VTCMOS and the performance of seriesconnected VTCMOS circuits are also discussed.

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KW - Low power

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VTCMOS Characteristics and Its Optimum Conditions Predicted by a Compact Analytical Model

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