VTCMOS characteristics and its optimum conditions predicted by a compact analytical model

H. Im, T. Inukai, H. Gomyo, T. Hiramoto, T. Sakurai

Research output: Contribution to conferencePaperpeer-review

22 Scopus citations

Abstract

A very compact analytical model of variable threshold voltage CMOS (VTCMOS) is proposed to study the active on-current, linking it with the stand-by off-current characteristics. Comparisons of modeled results to numerical simulations and experimental data are made with an excellent agreement. It is clearly demonstrated using the model that speed degradation due to low supply voltage can be compensated by the VTCMOS scheme with even smaller power. Influence of the short channel effect (SCE) on the performance of VTCMOS is investigated in terms of a new parameter, dS/dγ, both qualitatively and quantitatively. It is found that the SCE degrades the VTCMOS performance. Issues on the optimum conditions of VTCMOS are discussed.

Original languageEnglish
Pages123-128
Number of pages6
DOIs
StatePublished - 2001
EventInternational Symposium on Low Electronics and Design (ISLPED'01) - Huntington Beach, CA, United States
Duration: 6 Aug 20017 Aug 2001

Conference

ConferenceInternational Symposium on Low Electronics and Design (ISLPED'01)
Country/TerritoryUnited States
CityHuntington Beach, CA
Period6/08/017/08/01

Keywords

  • Analytical model
  • Body Effect
  • Low power
  • Substrate bias
  • Variable threshold voltage CMOS (VTCMOS)

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