Abstract
A very compact analytical model of variable threshold voltage CMOS (VTCMOS) is proposed to study the active on-current, linking it with the stand-by off-current characteristics. Comparisons of modeled results to numerical simulations and experimental data are made with an excellent agreement. It is clearly demonstrated using the model that speed degradation due to low supply voltage can be compensated by the VTCMOS scheme with even smaller power. Influence of the short channel effect (SCE) on the performance of VTCMOS is investigated in terms of a new parameter, dS/dγ, both qualitatively and quantitatively. It is found that the SCE degrades the VTCMOS performance. Issues on the optimum conditions of VTCMOS are discussed.
Original language | English |
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Pages | 123-128 |
Number of pages | 6 |
DOIs | |
State | Published - 2001 |
Event | International Symposium on Low Electronics and Design (ISLPED'01) - Huntington Beach, CA, United States Duration: 6 Aug 2001 → 7 Aug 2001 |
Conference
Conference | International Symposium on Low Electronics and Design (ISLPED'01) |
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Country/Territory | United States |
City | Huntington Beach, CA |
Period | 6/08/01 → 7/08/01 |
Keywords
- Analytical model
- Body Effect
- Low power
- Substrate bias
- Variable threshold voltage CMOS (VTCMOS)