W-band resistive mixer using metamorphic HEMT

Yong Hyun Baek; Bok Hyung Lee; Jung Hun Oh; Byeong Ok Lim; Dan-An; Jung Dong Park; Sam Dong Kim; Jin Koo Rhee

doi:10.1016/j.cap.2004.12.011

W-band resistive mixer using metamorphic HEMT

Yong Hyun Baek, Bok Hyung Lee, Jung Hun Oh, Byeong Ok Lim, Dan-An, Jung Dong Park, Sam Dong Kim, Jin Koo Rhee

Department of Electronics & Electrical Engineering

Dongguk University

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

We fabricate single-ended resistive W-band millimeter-wave monolithic IC (MIMIC) mixers based on 0.1 μm InGaAs/InAlAs/GaAs metamorphic HEMT technology. The mixers show good characteristics in linearity and LO-RF isolation, and the mixers with IF amplifiers exhibit a conversion loss of ∼0.4 dB, which is an improvement of ∼7.8 dB compared to that of the mixers without IF amplifiers. We obtain P-1 dB of 10 and 9 dBm from the mixers with and without the IF amplifiers, respectively.

Original language	English
Pages (from-to)	821-826
Number of pages	6
Journal	Current Applied Physics
Volume	6
Issue number	5
DOIs	https://doi.org/10.1016/j.cap.2004.12.011
State	Published - Sep 2006

Keywords

0.1 μm MHEMT
Resistive mixer
W-band

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10.1016/j.cap.2004.12.011

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title = "W-band resistive mixer using metamorphic HEMT",

abstract = "We fabricate single-ended resistive W-band millimeter-wave monolithic IC (MIMIC) mixers based on 0.1 μm InGaAs/InAlAs/GaAs metamorphic HEMT technology. The mixers show good characteristics in linearity and LO-RF isolation, and the mixers with IF amplifiers exhibit a conversion loss of ∼0.4 dB, which is an improvement of ∼7.8 dB compared to that of the mixers without IF amplifiers. We obtain P-1 dB of 10 and 9 dBm from the mixers with and without the IF amplifiers, respectively.",

keywords = "0.1 μm MHEMT, Resistive mixer, W-band",

author = "Baek, {Yong Hyun} and Lee, {Bok Hyung} and Oh, {Jung Hun} and Lim, {Byeong Ok} and Dan-An and Park, {Jung Dong} and Kim, {Sam Dong} and Rhee, {Jin Koo}",

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T1 - W-band resistive mixer using metamorphic HEMT

AU - Baek, Yong Hyun

AU - Lee, Bok Hyung

AU - Oh, Jung Hun

AU - Lim, Byeong Ok

AU - Dan-An,

AU - Park, Jung Dong

AU - Kim, Sam Dong

AU - Rhee, Jin Koo

PY - 2006/9

Y1 - 2006/9

N2 - We fabricate single-ended resistive W-band millimeter-wave monolithic IC (MIMIC) mixers based on 0.1 μm InGaAs/InAlAs/GaAs metamorphic HEMT technology. The mixers show good characteristics in linearity and LO-RF isolation, and the mixers with IF amplifiers exhibit a conversion loss of ∼0.4 dB, which is an improvement of ∼7.8 dB compared to that of the mixers without IF amplifiers. We obtain P-1 dB of 10 and 9 dBm from the mixers with and without the IF amplifiers, respectively.

AB - We fabricate single-ended resistive W-band millimeter-wave monolithic IC (MIMIC) mixers based on 0.1 μm InGaAs/InAlAs/GaAs metamorphic HEMT technology. The mixers show good characteristics in linearity and LO-RF isolation, and the mixers with IF amplifiers exhibit a conversion loss of ∼0.4 dB, which is an improvement of ∼7.8 dB compared to that of the mixers without IF amplifiers. We obtain P-1 dB of 10 and 9 dBm from the mixers with and without the IF amplifiers, respectively.

KW - 0.1 μm MHEMT

KW - Resistive mixer

KW - W-band

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DO - 10.1016/j.cap.2004.12.011

M3 - Article

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SN - 1567-1739

VL - 6

SP - 821

EP - 826

JO - Current Applied Physics

JF - Current Applied Physics

IS - 5

ER -

W-band resistive mixer using metamorphic HEMT

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