Wafer-Scale Epitaxial 1T′, 1T′–2H Mixed, and 2H Phases MoTe₂ Thin Films Grown by Metal–Organic Chemical Vapor Deposition

2D materials beyond molybdenum disulfide such as molybdenum ditelluride (MoTe₂) have attracted increasing attention because of their distinctive properties, such as phase-engineered, relatively narrow direct bandgap of 1.0–1.1 eV and superior carrier transport. However, a wafer-scale synthesis process is required for achieving practical applications in next-generation electronic devices using MoTe₂ thin films. Herein, the direct growth of atomically thin 1T′, 1T′–2H mixed, and 2H phases MoTe₂ films on a 4 in. SiO₂/Si wafer with high spatial uniformity (≈96%) via metal–organic vapor phase deposition is reported. Furthermore, the wafer-scale phase engineering of few-layer MoTe₂ film is investigated by controlling the H₂ molar flow rate. While the use of a low H₂ molar flow rate results in 1T′ and 1T′–2H mixed phase MoTe₂ films, 2H phase MoTe₂ films are obtained at a high H₂ molar flow rate. Field-effect transistors fabricated with the prepared 2H and 1T′ phases MoTe₂ channels reveal p-type semiconductor and semimetal properties, respectively. This work demonstrates the potential for reliable wafer-scale production of 1T′ and 2H phases MoTe₂ thin films employing the H₂ molar flow rate-controlled phase tunable method for practical applications in next-generation electronic devices as a p-type semiconductor and Wyle semimetal.