Wet chemical MESA etching using HCl-based and FeCl3 light sensitive etchants for InP Gunn diodes

Seong Dae Lee; Jae Seo Lee; No Sung Kwak; Mi Ra Kim; Sam Dong Kim; Jin Koo Rhee

doi:10.1109/GSMM.2008.4534545

Wet chemical MESA etching using HCl-based and FeCl₃ light sensitive etchants for InP Gunn diodes

Seong Dae Lee, Jae Seo Lee, No Sung Kwak, Mi Ra Kim, Sam Dong Kim, Jin Koo Rhee

Department of Electronics & Electrical Engineering

Dongguk University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

We have fabricated InP Gunn diodes with two different wet chemical etchants for MESA etching and compared the results. In order to make a comparative study, we have used two wet chemical etchants; one was HCl-based etchant (HCl : H₃PO₄ : H₂O = 3: 1: 2), the other one was FeCl₃ light sensitive etchant. It was shown that the fabricated diodes have the currents of 201 and 250 mA, and the breakdown voltage of below 8 V and over 11 V, respectively.

Original language	English
Title of host publication	2008 Global Symposium on Millimeter Waves, Proceeding, GSMM 2008
Publisher	IEEE Computer Society
Pages	17-20
Number of pages	4
ISBN (Print)	9781424418855
DOIs	https://doi.org/10.1109/GSMM.2008.4534545
State	Published - 2008
Event	2008 Global Symposium on Millimeter Waves, GSMM 2008 - Nanjing, China Duration: 21 Apr 2008 → 24 Apr 2008

Publication series

Name	2008 Global Symposium on Millimeter Waves, Proceeding, GSMM 2008

Conference

Conference	2008 Global Symposium on Millimeter Waves, GSMM 2008
Country/Territory	China
City	Nanjing
Period	21/04/08 → 24/04/08

Access to Document

10.1109/GSMM.2008.4534545

Cite this

Lee, S. D., Lee, J. S., Kwak, N. S., Kim, M. R., Kim, S. D., & Rhee, J. K. (2008). Wet chemical MESA etching using HCl-based and FeCl₃ light sensitive etchants for InP Gunn diodes. In 2008 Global Symposium on Millimeter Waves, Proceeding, GSMM 2008 (pp. 17-20). Article 4534545 (2008 Global Symposium on Millimeter Waves, Proceeding, GSMM 2008). IEEE Computer Society. https://doi.org/10.1109/GSMM.2008.4534545

@inproceedings{559fa06139fb42ceb341064c09584014,

title = "Wet chemical MESA etching using HCl-based and FeCl3 light sensitive etchants for InP Gunn diodes",

abstract = "We have fabricated InP Gunn diodes with two different wet chemical etchants for MESA etching and compared the results. In order to make a comparative study, we have used two wet chemical etchants; one was HCl-based etchant (HCl : H3PO4 : H2O = 3: 1: 2), the other one was FeCl3 light sensitive etchant. It was shown that the fabricated diodes have the currents of 201 and 250 mA, and the breakdown voltage of below 8 V and over 11 V, respectively.",

author = "Lee, {Seong Dae} and Lee, {Jae Seo} and Kwak, {No Sung} and Kim, {Mi Ra} and Kim, {Sam Dong} and Rhee, {Jin Koo}",

year = "2008",

doi = "10.1109/GSMM.2008.4534545",

language = "English",

isbn = "9781424418855",

series = "2008 Global Symposium on Millimeter Waves, Proceeding, GSMM 2008",

publisher = "IEEE Computer Society",

pages = "17--20",

booktitle = "2008 Global Symposium on Millimeter Waves, Proceeding, GSMM 2008",

address = "United States",

note = "2008 Global Symposium on Millimeter Waves, GSMM 2008 ; Conference date: 21-04-2008 Through 24-04-2008",

}

Lee, SD, Lee, JS, Kwak, NS, Kim, MR, Kim, SD & Rhee, JK 2008, Wet chemical MESA etching using HCl-based and FeCl₃ light sensitive etchants for InP Gunn diodes. in 2008 Global Symposium on Millimeter Waves, Proceeding, GSMM 2008., 4534545, 2008 Global Symposium on Millimeter Waves, Proceeding, GSMM 2008, IEEE Computer Society, pp. 17-20, 2008 Global Symposium on Millimeter Waves, GSMM 2008, Nanjing, China, 21/04/08. https://doi.org/10.1109/GSMM.2008.4534545

Wet chemical MESA etching using HCl-based and FeCl₃ light sensitive etchants for InP Gunn diodes. / Lee, Seong Dae; Lee, Jae Seo; Kwak, No Sung et al.
2008 Global Symposium on Millimeter Waves, Proceeding, GSMM 2008. IEEE Computer Society, 2008. p. 17-20 4534545 (2008 Global Symposium on Millimeter Waves, Proceeding, GSMM 2008).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Wet chemical MESA etching using HCl-based and FeCl3 light sensitive etchants for InP Gunn diodes

AU - Lee, Seong Dae

AU - Lee, Jae Seo

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AU - Kim, Mi Ra

AU - Kim, Sam Dong

AU - Rhee, Jin Koo

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Y1 - 2008

N2 - We have fabricated InP Gunn diodes with two different wet chemical etchants for MESA etching and compared the results. In order to make a comparative study, we have used two wet chemical etchants; one was HCl-based etchant (HCl : H3PO4 : H2O = 3: 1: 2), the other one was FeCl3 light sensitive etchant. It was shown that the fabricated diodes have the currents of 201 and 250 mA, and the breakdown voltage of below 8 V and over 11 V, respectively.

AB - We have fabricated InP Gunn diodes with two different wet chemical etchants for MESA etching and compared the results. In order to make a comparative study, we have used two wet chemical etchants; one was HCl-based etchant (HCl : H3PO4 : H2O = 3: 1: 2), the other one was FeCl3 light sensitive etchant. It was shown that the fabricated diodes have the currents of 201 and 250 mA, and the breakdown voltage of below 8 V and over 11 V, respectively.

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DO - 10.1109/GSMM.2008.4534545

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