XX-XY interface band mixing in GaAs/AlAs heterostructures

Hyunsik Im; L. E. Bremme; Y. C. Chung; P. C. Klipstein; R. Grey; G. Hill

doi:10.1016/S1386-9477(99)00082-X

X_X-X_Y interface band mixing in GaAs/AlAs heterostructures

Hyunsik Im, L. E. Bremme, Y. C. Chung, P. C. Klipstein, R. Grey, G. Hill

Division of System Semiconductor

Research output: Contribution to journal › Conference article › peer-review

5 Scopus citations

Abstract

The in-plane dispersion of the X_X,Y states in a GaAs/AlAs `double-barrier structure' is measured by varying the angle of an in-plane magnetic field. When X_X,Y (1) states in the emitter AlAs layer tunnel into collector X_X,Y (m>1) states, a characteristic dumbbell shape is observed for the bias shift of the resonant tunneling peak versus magnetic field angle, with the major axis along [1 1 0] or [1̄ 1 0]. This corresponds to an elliptical constant energy surface in the collector AlAs layer which is rotated by 45° with respect to the bulk Fermi surface. We explain the new symmetry by X_Y-X_Y interface band mixing which is closely analogous to the widely studied Γ-X_Z mixing. Our results provide new insight into the microscopic origin of both types of mixing.

Original language	English
Pages (from-to)	214-217
Number of pages	4
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	6
Issue number	1
DOIs	https://doi.org/10.1016/S1386-9477(99)00082-X
State	Published - Feb 2000
Event	13th International Conference on the Electronic Properties of Two-Dimensional Systems (EP2DS-13) - Ottawa, Ont, Can Duration: 1 Aug 1999 → 6 Aug 1999

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@article{2b1182bfae2e4e3b8e812150029cbaea,

title = "XX-XY interface band mixing in GaAs/AlAs heterostructures",

abstract = "The in-plane dispersion of the XX,Y states in a GaAs/AlAs `double-barrier structure' is measured by varying the angle of an in-plane magnetic field. When XX,Y (1) states in the emitter AlAs layer tunnel into collector XX,Y (m>1) states, a characteristic dumbbell shape is observed for the bias shift of the resonant tunneling peak versus magnetic field angle, with the major axis along [1 1 0] or [{\=1} 1 0]. This corresponds to an elliptical constant energy surface in the collector AlAs layer which is rotated by 45° with respect to the bulk Fermi surface. We explain the new symmetry by XY-XY interface band mixing which is closely analogous to the widely studied Γ-XZ mixing. Our results provide new insight into the microscopic origin of both types of mixing.",

author = "Hyunsik Im and Bremme, {L. E.} and Chung, {Y. C.} and Klipstein, {P. C.} and R. Grey and G. Hill",

year = "2000",

month = feb,

doi = "10.1016/S1386-9477(99)00082-X",

language = "English",

volume = "6",

pages = "214--217",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

publisher = "Elsevier B.V.",

number = "1",

note = "13th International Conference on the Electronic Properties of Two-Dimensional Systems (EP2DS-13) ; Conference date: 01-08-1999 Through 06-08-1999",

}

TY - JOUR

T1 - XX-XY interface band mixing in GaAs/AlAs heterostructures

AU - Im, Hyunsik

AU - Bremme, L. E.

AU - Chung, Y. C.

AU - Klipstein, P. C.

AU - Grey, R.

AU - Hill, G.

PY - 2000/2

Y1 - 2000/2

N2 - The in-plane dispersion of the XX,Y states in a GaAs/AlAs `double-barrier structure' is measured by varying the angle of an in-plane magnetic field. When XX,Y (1) states in the emitter AlAs layer tunnel into collector XX,Y (m>1) states, a characteristic dumbbell shape is observed for the bias shift of the resonant tunneling peak versus magnetic field angle, with the major axis along [1 1 0] or [1̄ 1 0]. This corresponds to an elliptical constant energy surface in the collector AlAs layer which is rotated by 45° with respect to the bulk Fermi surface. We explain the new symmetry by XY-XY interface band mixing which is closely analogous to the widely studied Γ-XZ mixing. Our results provide new insight into the microscopic origin of both types of mixing.

AB - The in-plane dispersion of the XX,Y states in a GaAs/AlAs `double-barrier structure' is measured by varying the angle of an in-plane magnetic field. When XX,Y (1) states in the emitter AlAs layer tunnel into collector XX,Y (m>1) states, a characteristic dumbbell shape is observed for the bias shift of the resonant tunneling peak versus magnetic field angle, with the major axis along [1 1 0] or [1̄ 1 0]. This corresponds to an elliptical constant energy surface in the collector AlAs layer which is rotated by 45° with respect to the bulk Fermi surface. We explain the new symmetry by XY-XY interface band mixing which is closely analogous to the widely studied Γ-XZ mixing. Our results provide new insight into the microscopic origin of both types of mixing.

UR - http://www.scopus.com/inward/record.url?scp=0034138991&partnerID=8YFLogxK

U2 - 10.1016/S1386-9477(99)00082-X

DO - 10.1016/S1386-9477(99)00082-X

M3 - Conference article

AN - SCOPUS:0034138991

SN - 1386-9477

VL - 6

SP - 214

EP - 217

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 1

T2 - 13th International Conference on the Electronic Properties of Two-Dimensional Systems (EP2DS-13)

Y2 - 1 August 1999 through 6 August 1999

ER -

X_X-X_Y interface band mixing in GaAs/AlAs heterostructures

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